Simulation of Rectangular Shaped RF MEMS Shunt Switch and Comparing its Isolation Performance with Series Switch at DC - 30 GHz

Abstract

Aim: In this paper, isolation performance of rectangular shaped RF MEMS shunt and series switch is described and simulated at up to 30 GHz using HFSS software. Materials and Methods: The isolation performance of rectangular shaped shunt switch (n=25) was compared to the isolation performance of rectangular shaped series switch at a frequency range of upto 30 GHz. Beam was built over the two coplanar waveguides. Samples were calculated using sample computation having a pretest power of 80 % where Alpha, Beta are 0.05 and 0.2 respectively. Results: The novel shunt switch has better isolation performance (- 36.2488 dB) compared to the series switch (-19.4685 dB). The optimized dimensions for maximum isolation performance were L=360 µm, W=100 µm, T=1 µm for beam. The attained significance of isolation performance is 1<0.001 (p<0.05). Conclusion: The observed results show that novel shunt switch isolation performance is significantly higher than series switch.